KSA812GAMTF
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- Mfr.Part #
- KSA812GAMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A SOT23-3
- Stock
- 31,405
- In Stock ：
- 31,405
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Power - Max :
- 150mW
- Base Part Number :
- KSA812
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 180MHz
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Datasheets
- KSA812GAMTF
PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KSA812GAMTF Overview
In this device, the DC current gain is 200 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.The device exhibits a collector-emitter breakdown at 50V.
KSA812GAMTF Features
the DC current gain for this device is 200 @ 1mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
KSA812GAMTF Applications
There are a lot of ON Semiconductor
KSA812GAMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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