KSA539CYTA

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Mfr.Part #
KSA539CYTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 45V 0.2A TO92-3
Stock
39,646
In Stock :
39,646

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Current Rating :
-200mA
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Element Configuration :
Single
Collector Emitter Saturation Voltage :
-250mV
Mounting Type :
Through Hole
Polarity/Channel Type :
PNP
Max Breakdown Voltage :
45V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Box (TB)
Emitter Base Voltage (VEBO) :
-5V
Published :
2007
hFE Min :
40
Operating Temperature :
150°C TJ
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
45V
JESD-609 Code :
e3
Max Power Dissipation :
400mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 50mA 1V
Mount :
Through Hole
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
500mV @ 15mA, 150mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins :
3
ECCN Code :
EAR99
Max Collector Current :
200mA
Number of Terminations :
3
Terminal Position :
BOTTOM
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
-60V
Weight :
240mg
Base Part Number :
KSA539
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
45V
Factory Lead Time :
8 Weeks
Voltage - Rated DC :
-45V
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
400mW
Number of Elements :
1
Datasheets
KSA539CYTA
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA539CYTA from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Pins:3, Number of Terminations:3, Base Part Number:KSA539, KSA539CYTA pinout, KSA539CYTA datasheet PDF, KSA539CYTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA539CYTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA539CYTA


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

KSA539CYTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 50mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 200mA volts.

KSA539CYTA Features


the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA


KSA539CYTA Applications


There are a lot of ON Semiconductor
KSA539CYTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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