KSA539YTA

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Mfr.Part #
KSA539YTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 45V 0.2A TO92-3
Stock
1,892
In Stock :
1,892

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight :
178.2mg
Voltage - Collector Emitter Breakdown (Max) :
45V
Emitter Base Voltage (VEBO) :
-5V
Base Part Number :
KSA539
Collector Emitter Saturation Voltage :
-250mV
Max Collector Current :
200mA
Current - Collector Cutoff (Max) :
100nA ICBO
Min Operating Temperature :
-55°C
Power Dissipation :
400mW
Current Rating :
-200mA
Element Configuration :
Single
Collector Base Voltage (VCBO) :
-60V
hFE Min :
40
Collector Emitter Voltage (VCEO) :
45V
Lead Free :
Lead Free
Transistor Type :
PNP
Mount :
Through Hole
Max Operating Temperature :
150°C
Power - Max :
400mW
Number of Pins :
3
Max Power Dissipation :
400mW
Polarity :
PNP
Radiation Hardening :
No
Supplier Device Package :
TO-92-3
Mounting Type :
Through Hole
Voltage - Rated DC :
-45V
Operating Temperature :
150°C TJ
Collector Emitter Breakdown Voltage :
45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 50mA 1V
Current - Collector (Ic) (Max) :
200mA
RoHS Status :
RoHS Compliant
Packaging :
Tape and Box (TB)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 15mA, 150mA
Datasheets
KSA539YTA
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA539YTA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number:KSA539, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, KSA539YTA pinout, KSA539YTA datasheet PDF, KSA539YTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA539YTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA539YTA


PNP 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

KSA539YTA Overview


This device has a DC current gain of 120 @ 50mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -200mA.Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.The maximum collector current is 200mA volts.

KSA539YTA Features


the DC current gain for this device is 120 @ 50mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
the supplier device package of TO-92-3


KSA539YTA Applications


There are a lot of ON Semiconductor
KSA539YTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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