JANSR2N3636UB
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- Mfr.Part #
- JANSR2N3636UB
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 175V 10UA UB
- Stock
- 43,138
- In Stock ：
- 43,138
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- -
- Package / Case :
- 4-SMD, No Lead
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 10 µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Mounting Type :
- Surface Mount
- Series :
- Military, MIL-PRF-19500/357
- Package :
- Bulk
- Power - Max :
- 1.5 W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Supplier Device Package :
- UB
- Current - Collector Cutoff (Max) :
- 10μA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Datasheets
- JANSR2N3636UB
PNP -65°C ~ 200°C (TJ) 10µA 4-SMD, No Lead Surface Mount
JANSR2N3636UB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 50mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 175 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANSR2N3636UB Features
the DC current gain for this device is 50 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB
JANSR2N3636UB Applications
There are a lot of Microchip
JANSR2N3636UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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