JANSR2N3636L
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- Mfr.Part #
- JANSR2N3636L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 10UA TO5
- Stock
- 33,295
- In Stock ：
- 33,295
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- -
- Power - Max :
- 1 W
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Current - Collector (Ic) (Max) :
- 10 µA
- Current - Collector Cutoff (Max) :
- 10μA
- Series :
- Military, MIL-PRF-19500/357
- Transistor Type :
- PNP
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA, 10V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Supplier Device Package :
- TO-5
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package :
- Bulk
- Datasheets
- JANSR2N3636L
PNP -65°C ~ 200°C (TJ) 10µA TO-205AA, TO-5-3 Metal Can Through Hole
JANSR2N3636L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 50mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 50mA.This product comes in a TO-5 device package from the supplier.Device displays Collector Emitter Breakdown (175 V maximal voltage).
JANSR2N3636L Features
the DC current gain for this device is 50 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-5
JANSR2N3636L Applications
There are a lot of Microchip
JANSR2N3636L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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