JANSR2N3440
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- Mfr.Part #
- JANSR2N3440
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO39
- Stock
- 30,429
- In Stock ：
- 30,429
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-39
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Voltage - Collector Emitter Breakdown (Max) :
- 250V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Series :
- Military, MIL-PRF-19500/368
- Current - Collector (Ic) (Max) :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 2µA
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 33 Weeks
- Published :
- 2007
- Datasheets
- JANSR2N3440
NPN -65°C~200°C TJ 2μA TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANSR2N3440 Overview
This device has a DC current gain of 40 @ 20mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-39.Detection of Collector Emitter Breakdown at 250V maximal voltage is present.
JANSR2N3440 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of TO-39
JANSR2N3440 Applications
There are a lot of Microsemi Corporation
JANSR2N3440 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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