JANSR2N3439L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Package :

Bulk

Voltage - Collector Emitter Breakdown (Max) :

350 V

Terminal Position :

BOTTOM

Package Shape :

Round

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

DC Current Gain-Min (hFE) :

40

Lifecycle Status :

Production (Last Updated: 2 months ago)

JEDEC-95 Code :

TO-5

ECCN Code :

EAR99

Subcategory :

Transistors

Current - Collector (Ic) (Max) :

2 µA

Number of Terminals :

3

Current - Collector Cutoff (Max) :

2µA

Pin Count :

3

Brand :

Microchip / Microsemi

HTS Code :

8541.21.00.95

Manufacturer :

Cutler Hammer, Div of Eaton Co

Power - Max :

800 mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA, 10V

JESD-30 Code :

O-MBCY-W3

Product Category :

Bipolar Transistors - BJT

Collector-Emitter Voltage-Max :

350 V

RoHS :

N

Package / Case :

TO-205AA, TO-5-3 Metal Can

Surface Mount :

No

Power Dissipation-Max (Abs) :

0.8 W

Qualification Status :

Qualified

Number of Elements :

1

Collector Current-Max (IC) :

1 A

Configuration :

Single

Operating Temperature :

-65°C ~ 200°C (TJ)

Product Type :

BJTs - Bipolar Transistors

Supplier Device Package :

TO-5

Polarity/Channel Type :

NPN

Reach Compliance Code :

Compliant

Reference Standard :

MIL-19500; RH - 100K Rad(Si)

Case Connection :

COLLECTOR

Schedule B :

8541210080/8541210080/8541210080/8541210080/8541210080

Terminal Form :

Wire

Transistor Element Material :

SILICON

Product Status :

Active

Mounting Type :

Through Hole

Packaging :

Bulk

Series :

Military, MIL-PRF-19500/368

Frequency - Transition :

-