JANSR2N2907A

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Mfr.Part #
JANSR2N2907A
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 60V 0.6A TO18
Stock
41,476
In Stock :
41,476

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
60V
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Polarity :
PNP
Voltage - Collector Emitter Breakdown (Max) :
60V
Radiation Hardening :
yes
Series :
Military, MIL-PRF-19500/291
Packaging :
Tray
Current - Collector (Ic) (Max) :
600mA
Power - Max :
500mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1mA 10V
Number of Pins :
3
Power Dissipation :
500mW
Min Operating Temperature :
-65°C
Max Power Dissipation :
500mW
Supplier Device Package :
UB
Package / Case :
3-SMD, No Lead
Max Operating Temperature :
200°C
Current - Collector Cutoff (Max) :
50nA
Collector Emitter Voltage (VCEO) :
60V
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Number of Elements :
1
Published :
2007
Operating Temperature :
-65°C~200°C TJ
Factory Lead Time :
33 Weeks
RoHS Status :
Non-RoHS Compliant
Transistor Type :
PNP
Mount :
Surface Mount
Max Collector Current :
600mA
Mounting Type :
Surface Mount
Datasheets
JANSR2N2907A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANSR2N2907A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:3-SMD, No Lead, Operating Temperature:-65°C~200°C TJ, Mounting Type:Surface Mount, JANSR2N2907A pinout, JANSR2N2907A datasheet PDF, JANSR2N2907A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANSR2N2907A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JANSR2N2907A


PNP -65°C~200°C TJ 50nA 1 Elements 3-SMD, No Lead Tray Surface Mount

JANSR2N2907AUB Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Supplier package UB contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 600mA volts can be achieved.

JANSR2N2907AUB Features


the DC current gain for this device is 100 @ 1mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB


JANSR2N2907AUB Applications


There are a lot of Microsemi Corporation
JANSR2N2907AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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