JANSR2N2906AL
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- Mfr.Part #
- JANSR2N2906AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO18
- Stock
- 10,606
- In Stock ：
- 10,606
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Operating Temperature :
- -65°C ~ 200°C
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 50nA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Supplier Device Package :
- TO-18
- Product Category :
- Bipolar Transistors - BJT
- Package :
- Bulk
- Transistor Type :
- PNP
- Brand :
- Microchip / Microsemi
- Current - Collector (Ic) (Max) :
- 600 mA
- Packaging :
- Bulk
- Manufacturer :
- Microchip
- Mounting Type :
- Through Hole
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- Power - Max :
- 500 mW
- RoHS :
- N
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Series :
- Military, MIL-PRF-19500/291
- Subcategory :
- Transistors
- Base Product Number :
- 2N2906
- Datasheets
- JANSR2N2906AL
PNP -65°C ~ 200°C 50nA TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANSR2N2906AL Overview
In this device, the DC current gain is 40 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Product comes in the supplier's device package TO-18.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.
JANSR2N2906AL Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18
JANSR2N2906AL Applications
There are a lot of Microchip Technology
JANSR2N2906AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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