JANSR2N2369AUBC

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Base Capacitance-Max :

4 pF

Package Shape :

RECTANGULAR

Package / Case :

3-SMD, No Lead

Polarity/Channel Type :

NPN

Surface Mount :

yes

Supplier Device Package :

3-SMD

Product Category :

Bipolar Transistors - BJT

Power - Max :

360 mW

Reach Compliance Code :

Compliant

Frequency - Transition :

-

Number of Elements :

1

Product Type :

BJTs - Bipolar Transistors

Terminal Form :

NO LEAD

VCEsat-Max :

0.2 V

JESD-30 Code :

R-CDSO-N3

Packaging :

Waffle

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA, 1V

Series :

Military, MIL-PRF-19500/317

Voltage - Collector Emitter Breakdown (Max) :

15 V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Reference Standard :

MIL-19500; RH - 100K Rad(Si)

Configuration :

Single

Product Status :

Active

Technology :

Si

Power Dissipation Ambient-Max :

0.36 W

RoHS :

N

DC Current Gain-Min (hFE) :

20

Transistor Application :

SWITCHING

Operating Temperature :

-65°C ~ 200°C (TJ)

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Transistor Type :

NPN

Mounting Type :

Surface Mount

Terminal Position :

Dual

Package :

Bulk

Collector-Emitter Voltage-Max :

15 V

Base Product Number :

2N2369A

Power Dissipation-Max (Abs) :

0.36 W

Current - Collector (Ic) (Max) :

400 nA

Current - Collector Cutoff (Max) :

400nA

Number of Terminals :

3

Brand :

Microchip / Microsemi