JANSR2N2369A

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Mfr.Part #
JANSR2N2369A
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS NPN 15V TO18
Stock
10,463
In Stock :
10,463

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
RoHS Status :
Non-RoHS Compliant
Published :
2007
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Reference Standard :
MIL-19500; RH - 100K Rad(Si)
Packaging :
Bulk
Turn Off Time-Max (toff) :
18ns
Surface Mount :
yes
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Package / Case :
3-SMD, No Lead
Configuration :
Single
Polarity/Channel Type :
NPN
Collector-Base Capacitance-Max :
4pF
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Series :
Military, MIL-PRF-19500/317
Transistor Type :
NPN
Terminal Position :
Dual
Voltage - Collector Emitter Breakdown (Max) :
15V
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
450mV @ 10mA, 100mA
Current - Collector Cutoff (Max) :
400nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 100mA 1V
Turn On Time-Max (ton) :
12ns
Power - Max :
400mW
Number of Elements :
1
Operating Temperature :
-65°C~200°C TJ
Number of Pins :
3
VCEsat-Max :
0.2 V
Datasheets
JANSR2N2369A
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANSR2N2369A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:3-SMD, No Lead, Number of Terminations:3, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, JANSR2N2369A pinout, JANSR2N2369A datasheet PDF, JANSR2N2369A amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANSR2N2369A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JANSR2N2369A


NPN -65°C~200°C TJ 400nA 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount

JANSR2N2369AUB Overview


This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 15V maximal voltage is present.

JANSR2N2369AUB Features


the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA


JANSR2N2369AUB Applications


There are a lot of Microsemi Corporation
JANSR2N2369AUB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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