JANSP2N3637L
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- Mfr.Part #
- JANSP2N3637L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 3,554
- In Stock ：
- 3,554
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Power - Max :
- 1 W
- Series :
- Military, MIL-PRF-19500/357
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Product Category :
- Microchip Technology
- Package :
- Bulk
- Supplier Device Package :
- TO-5AA
- RoHS :
- N
- Frequency - Transition :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector (Ic) (Max) :
- 1 A
- Current - Collector Cutoff (Max) :
- 10μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Manufacturer :
- Microchip
- Brand :
- Microchip / Microsemi
- Datasheets
- JANSP2N3637L
PNP -65°C ~ 200°C (TJ) 10μA TO-205AA, TO-5-3 Metal Can Through Hole
JANSP2N3637L Overview
DC current gain in this device equals 100 @ 50mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 50mA.Product comes in TO-5AA supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
JANSP2N3637L Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-5AA
JANSP2N3637L Applications
There are a lot of Microchip Technology
JANSP2N3637L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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