JANSP2N3501L
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- Mfr.Part #
- JANSP2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 26,029
- In Stock ：
- 26,029
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Product Status :
- Active
- Frequency - Transition :
- -
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Manufacturer :
- Microchip
- Current - Collector (Ic) (Max) :
- 300 mA
- Mounting Type :
- Through Hole
- Brand :
- Microchip / Microsemi
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Power - Max :
- 1 W
- RoHS :
- N
- Series :
- Military, MIL-PRF-19500/366
- Supplier Device Package :
- TO-5AA
- Product Category :
- Microchip Technology
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Datasheets
- JANSP2N3501L
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
JANSP2N3501L Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.Supplier device package TO-5AA comes with the product.The device exhibits a collector-emitter breakdown at 150 V.
JANSP2N3501L Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-5AA
JANSP2N3501L Applications
There are a lot of Microchip Technology
JANSP2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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