JANSP2N3440L
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- Mfr.Part #
- JANSP2N3440L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 32,712
- In Stock ：
- 32,712
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 800 mW
- Product Category :
- Microchip Technology
- Manufacturer :
- Microchip
- Series :
- Military, MIL-PRF-19500/368
- Operating Temperature :
- -55°C ~ 200°C
- Voltage - Collector Emitter Breakdown (Max) :
- 250 V
- Frequency - Transition :
- -
- Mounting Type :
- Through Hole
- Brand :
- Microchip / Microsemi
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 1 A
- Supplier Device Package :
- TO-5AA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max) :
- 2µA
- Product Status :
- Active
- RoHS :
- N
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Datasheets
- JANSP2N3440L
NPN -55°C ~ 200°C 2μA TO-205AA, TO-5-3 Metal Can Through Hole
JANSP2N3440L Overview
In this device, the DC current gain is 40 @ 20mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 50mA.Supplier device package TO-5AA comes with the product.The device exhibits a collector-emitter breakdown at 250 V.
JANSP2N3440L Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of TO-5AA
JANSP2N3440L Applications
There are a lot of Microchip Technology
JANSP2N3440L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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