JANSP2N3439L
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- Mfr.Part #
- JANSP2N3439L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 5,657
- In Stock ：
- 5,657
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS :
- N
- Manufacturer :
- Microchip
- Brand :
- Microchip / Microsemi
- Mounting Type :
- Through Hole
- Power - Max :
- 800 mW
- Current - Collector (Ic) (Max) :
- 1 A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Series :
- Military, MIL-PRF-19500/368
- Transistor Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Operating Temperature :
- -55°C ~ 200°C
- Supplier Device Package :
- TO-5AA
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Frequency - Transition :
- -
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 350 V
- Current - Collector Cutoff (Max) :
- 2µA
- Product Category :
- Microchip Technology
- Datasheets
- JANSP2N3439L
NPN -55°C ~ 200°C 2μA TO-205AA, TO-5-3 Metal Can Through Hole
JANSP2N3439L Overview
In this device, the DC current gain is 40 @ 20mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.Product comes in the supplier's device package TO-5AA.There is a 350 V maximal voltage in the device due to collector-emitter breakdown.
JANSP2N3439L Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of TO-5AA
JANSP2N3439L Applications
There are a lot of Microchip Technology
JANSP2N3439L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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