JANSP2N3057A
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- Mfr.Part #
- JANSP2N3057A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AB, TO-46-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 12,620
- In Stock ：
- 12,620
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 500 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Current - Collector Cutoff (Max) :
- 10nA
- Mounting Type :
- Through Hole
- RoHS :
- N
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- NPN
- Frequency - Transition :
- -
- Package / Case :
- TO-206AB, TO-46-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Manufacturer :
- Microchip
- Series :
- Military, MIL-PRF-19500/391
- Package :
- Bulk
- Product Category :
- Microchip Technology
- Supplier Device Package :
- TO-46
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 1 A
- Brand :
- Microchip / Microsemi
- Datasheets
- JANSP2N3057A
NPN -65°C ~ 200°C (TJ) 10nA TO-206AB, TO-46-3 Metal Can Through Hole
JANSP2N3057A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANSP2N3057A Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-46
JANSP2N3057A Applications
There are a lot of Microchip Technology
JANSP2N3057A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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