JANSM2N3700UB/TR
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- Mfr.Part #
- JANSM2N3700UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A UB
- Stock
- 14,424
- In Stock ：
- 14,424
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1 A
- RoHS :
- N
- Package :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 10nA
- Transistor Type :
- NPN
- Product Category :
- Bipolar Transistors - BJT
- Power - Max :
- 500 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Subcategory :
- Transistors
- Mounting Type :
- Surface Mount
- Product Type :
- BJTs - Bipolar Transistors
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Series :
- Military, MIL-PRF-19500/391
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Base Product Number :
- 2N3700
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Supplier Device Package :
- UB
- Brand :
- Microchip / Microsemi
- Manufacturer :
- Microchip
- Packaging :
- Bulk
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- JANSM2N3700UB/TR
NPN -65°C ~ 200°C (TJ) 10nA 3-SMD, No Lead Bulk Surface Mount
JANSM2N3700UB/TR Overview
This device has a DC current gain of 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Product package UB comes from the supplier.Collector Emitter Breakdown occurs at 80 VV - Maximum voltage.
JANSM2N3700UB/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of UB
JANSM2N3700UB/TR Applications
There are a lot of Microchip Technology
JANSM2N3700UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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