JANSM2N3501L
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- Mfr.Part #
- JANSM2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 27,603
- In Stock ：
- 27,603
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Manufacturer :
- Microchip
- Current - Collector (Ic) (Max) :
- 300 mA
- Brand :
- Microchip / Microsemi
- RoHS :
- N
- Frequency - Transition :
- -
- Supplier Device Package :
- TO-5AA
- Package :
- Bulk
- Product Category :
- Microchip Technology
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Series :
- Military, MIL-PRF-19500/366
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Power - Max :
- 1 W
- Datasheets
- JANSM2N3501L
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
JANSM2N3501L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 150 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANSM2N3501L Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-5AA
JANSM2N3501L Applications
There are a lot of Microchip Technology
JANSM2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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