JANSM2N3019S
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- Mfr.Part #
- JANSM2N3019S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 7,903
- In Stock ：
- 7,903
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Microchip
- Current - Collector (Ic) (Max) :
- 1 A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/391
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Supplier Device Package :
- TO-39 (TO-205AD)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Product Category :
- Microchip Technology
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Product Status :
- Active
- Brand :
- Microchip / Microsemi
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- NPN
- Power - Max :
- 800 mW
- RoHS :
- N
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 10nA
- Datasheets
- JANSM2N3019S
NPN -65°C ~ 200°C (TJ) 10nA TO-205AD, TO-39-3 Metal Can Through Hole
JANSM2N3019S Overview
This device has a DC current gain of 100 @ 150mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-39 (TO-205AD).Detection of Collector Emitter Breakdown at 80 V maximal voltage is present.
JANSM2N3019S Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-39 (TO-205AD)
JANSM2N3019S Applications
There are a lot of Microchip Technology
JANSM2N3019S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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