JANSM2N2906AUB
- Mfr.Part #
- JANSM2N2906AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 37,583
- In Stock :
- 37,583
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Category :
- Microchip Technology
- Supplier Device Package :
- UB
- Current - Collector (Ic) (Max) :
- 600 mA
- Operating Temperature :
- -65°C ~ 200°C
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Package :
- Bulk
- Series :
- Military, MIL-PRF-19500/291
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Brand :
- Microchip / Microsemi
- Package / Case :
- 3-SMD, No Lead
- RoHS :
- N
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA
- Power - Max :
- 500 mW
- Product Status :
- Active
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Datasheets
- JANSM2N2906AUB
PNP -65°C ~ 200°C 50nA 3-SMD, No Lead Surface Mount
JANSM2N2906AUB Overview
In this device, the DC current gain is 40 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 60 V.
JANSM2N2906AUB Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of UB
JANSM2N2906AUB Applications
There are a lot of Microchip Technology
JANSM2N2906AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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