JANSL2N5151U3
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- Mfr.Part #
- JANSL2N5151U3
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 45,576
- In Stock ：
- 45,576
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Brand :
- Microchip / Microsemi
- Manufacturer :
- Microchip
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Package / Case :
- 3-SMD, No Lead
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Power - Max :
- 1.16 W
- Supplier Device Package :
- U3
- Current - Collector (Ic) (Max) :
- 2 A
- Frequency - Transition :
- -
- Product Category :
- Microchip Technology
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A, 5V
- Series :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- RoHS :
- N
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 50μA
- Datasheets
- JANSL2N5151U3
PNP -65°C ~ 200°C (TJ) 50μA 3-SMD, No Lead Surface Mount
JANSL2N5151U3 Overview
In this device, the DC current gain is 30 @ 2.5A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 500mA, 5A.Supplier device package U3 comes with the product.The device exhibits a collector-emitter breakdown at 80 V.
JANSL2N5151U3 Features
the DC current gain for this device is 30 @ 2.5A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of U3
JANSL2N5151U3 Applications
There are a lot of Microchip Technology
JANSL2N5151U3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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