JANSL2N3501L
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- Mfr.Part #
- JANSL2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 13,557
- In Stock ：
- 13,557
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Manufacturer :
- Microchip
- Supplier Device Package :
- TO-5AA
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 300 mA
- RoHS :
- N
- Brand :
- Microchip / Microsemi
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Transistor Type :
- NPN
- Frequency - Transition :
- -
- Series :
- Military, MIL-PRF-19500/366
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Product Status :
- Active
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Power - Max :
- 1 W
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Product Category :
- Microchip Technology
- Datasheets
- JANSL2N3501L
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
JANSL2N3501L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 15mA, 150mA.TO-5AA is the supplier device package for this product.This device displays a 150 V maximum voltage - Collector Emitter Breakdown.
JANSL2N3501L Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-5AA
JANSL2N3501L Applications
There are a lot of Microchip Technology
JANSL2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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