JANSL2N3500
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- Mfr.Part #
- JANSL2N3500
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 21,331
- In Stock ：
- 21,331
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Category :
- Microchip Technology
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Current - Collector (Ic) (Max) :
- 300 mA
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/366
- Frequency - Transition :
- -
- Transistor Type :
- NPN
- Product Status :
- Active
- Power - Max :
- 1 W
- Package :
- Bulk
- Brand :
- Microchip / Microsemi
- RoHS :
- N
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Supplier Device Package :
- TO-39 (TO-205AD)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Manufacturer :
- Microchip
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Datasheets
- JANSL2N3500
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AD, TO-39-3 Metal Can Through Hole
JANSL2N3500 Overview
In this device, the DC current gain is 40 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 150 V.
JANSL2N3500 Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-39 (TO-205AD)
JANSL2N3500 Applications
There are a lot of Microchip Technology
JANSL2N3500 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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