JANSL2N3499L
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- Mfr.Part #
- JANSL2N3499L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 9,540
- In Stock ：
- 9,540
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- RoHS :
- N
- Product Category :
- Microchip Technology
- Series :
- Military, MIL-PRF-19500/366
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Transistor Type :
- NPN
- Power - Max :
- 1 W
- Brand :
- Microchip / Microsemi
- Manufacturer :
- Microchip
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Current - Collector (Ic) (Max) :
- 500 mA
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Frequency - Transition :
- -
- Package :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Supplier Device Package :
- TO-5AA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Datasheets
- JANSL2N3499L
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
JANSL2N3499L Overview
This device has a DC current gain of 100 @ 150mA, 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-5AA.Detection of Collector Emitter Breakdown at 100 V maximal voltage is present.
JANSL2N3499L Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the supplier device package of TO-5AA
JANSL2N3499L Applications
There are a lot of Microchip Technology
JANSL2N3499L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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