JANSL2N2906AUB
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- Mfr.Part #
- JANSL2N2906AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 14,982
- In Stock ：
- 14,982
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C ~ 200°C
- Power - Max :
- 500 mW
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Product Status :
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-SMD, No Lead
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA
- Package :
- Bulk
- Subcategory :
- Transistors
- Brand :
- Microchip / Microsemi
- Supplier Device Package :
- UB
- Product Category :
- Bipolar Transistors - BJT
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- RoHS :
- N
- Series :
- Military, MIL-PRF-19500/291
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector (Ic) (Max) :
- 600 mA
- Datasheets
- JANSL2N2906AUB
PNP -65°C ~ 200°C 50nA 3-SMD, No Lead Surface Mount
JANSL2N2906AUB Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.The product comes in the supplier device package of UB.A 60 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANSL2N2906AUB Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of UB
JANSL2N2906AUB Applications
There are a lot of Microchip Technology
JANSL2N2906AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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