JANSL2N2369AUB
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- Mfr.Part #
- JANSL2N2369AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 30,621
- In Stock ：
- 30,621
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Microchip
- Supplier Device Package :
- UB
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Power - Max :
- 400 mW
- Package / Case :
- 3-SMD, No Lead
- Series :
- Military, MIL-PRF-19500/317
- Subcategory :
- Transistors
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 20 V
- Product Category :
- Bipolar Transistors - BJT
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 400nA
- Frequency - Transition :
- -
- RoHS :
- N
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA, 1V
- Brand :
- Microchip / Microsemi
- Operating Temperature :
- -65°C ~ 200°C
- Package :
- Bulk
- Datasheets
- JANSL2N2369AUB
NPN -65°C ~ 200°C 400nA 3-SMD, No Lead Surface Mount
JANSL2N2369AUB Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA, 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 450mV @ 10mA, 100mA.UB is the supplier device package for this product.This device displays a 20 V maximum voltage - Collector Emitter Breakdown.
JANSL2N2369AUB Features
the DC current gain for this device is 40 @ 10mA, 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the supplier device package of UB
JANSL2N2369AUB Applications
There are a lot of Microchip Technology
JANSL2N2369AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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