JANSL2N2219AL
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- Mfr.Part #
- JANSL2N2219AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 11,882
- In Stock ：
- 11,882
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 800 mA
- Package :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- RoHS :
- N
- Mounting Type :
- Through Hole
- Brand :
- Microchip / Microsemi
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Manufacturer :
- Microchip
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- 10nA
- Power - Max :
- 800 mW
- Product Type :
- BJTs - Bipolar Transistors
- Subcategory :
- Transistors
- Frequency - Transition :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-5AA
- Series :
- Military, MIL-PRF-19500/251
- Product Category :
- Bipolar Transistors - BJT
- Datasheets
- JANSL2N2219AL
NPN -55°C ~ 200°C (TJ) 10nA TO-205AA, TO-5-3 Metal Can Through Hole
JANSL2N2219AL Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA, 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.The product comes in the supplier device package of TO-5AA.A 50 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANSL2N2219AL Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-5AA
JANSL2N2219AL Applications
There are a lot of Microchip Technology
JANSL2N2219AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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