JANSH2N2219AL
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- Mfr.Part #
- JANSH2N2219AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 44,467
- In Stock ：
- 44,467
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Brand :
- Microchip / Microsemi
- RoHS :
- N
- Supplier Device Package :
- TO-5AA
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 800 mA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Operating Temperature :
- -55°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Mounting Type :
- Through Hole
- Product Category :
- Microchip Technology
- Frequency - Transition :
- -
- Power - Max :
- 800 mW
- Package :
- Bulk
- Series :
- Military, MIL-PRF-19500/251
- Manufacturer :
- Microchip
- Datasheets
- JANSH2N2219AL
NPN -55°C ~ 200°C (TJ) 10nA TO-205AA, TO-5-3 Metal Can Through Hole
JANSH2N2219AL Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Supplier device package TO-5AA comes with the product.The device exhibits a collector-emitter breakdown at 50 V.
JANSH2N2219AL Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-5AA
JANSH2N2219AL Applications
There are a lot of Microchip Technology
JANSH2N2219AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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