JANSF2N4449

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

Single

Reach Compliance Code :

Compliant

Frequency - Transition :

-

Power Dissipation-Max (Abs) :

0.3 W

Current - Collector Cutoff (Max) :

400nA

Product Status :

Active

Package :

Bulk

Packaging :

Tray

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA, 1V

ECCN Code :

EAR99

Power - Max :

360 mW

Supplier Device Package :

TO-46 (TO-206AB)

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Base Product Number :

2N4449

Operating Temperature :

-65°C ~ 200°C (TJ)

RoHS :

N

Technology :

Si

Brand :

Microchip / Microsemi

Collector Current-Max (IC) :

0.2 A

Series :

Military, MIL-PRF-19500/317

DC Current Gain-Min (hFE) :

40

Product Category :

Bipolar Transistors - BJT

Voltage - Collector Emitter Breakdown (Max) :

20 V

Product Type :

BJTs - Bipolar Transistors

Polarity/Channel Type :

NPN

Surface Mount :

No

Mounting Type :

Through Hole

Package / Case :

TO-206AB, TO-46-3 Metal Can

Transistor Type :

NPN