JANSF2N3810L
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- Mfr.Part #
- JANSF2N3810L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-78-6 Metal Can
- Datasheet
- Download
- Description
- NPN TRANSISTOR
- Stock
- 41,910
- In Stock ：
- 41,910
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 50mA
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Base Product Number :
- 2N3810
- Product Status :
- Active
- Supplier Device Package :
- TO-78-6
- Power - Max :
- 350mW
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Package / Case :
- TO-78-6 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 100μA, 1mA
- Technology :
- Si
- Frequency - Transition :
- -
- Series :
- Military, MIL-PRF-19500/336
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1mA, 5V
- Transistor Type :
- 2 PNP (Dual)
- Datasheets
- JANSF2N3810L
2 PNP (Dual) -65°C ~ 200°C (TJ) 10µA (ICBO) TO-78-6 Metal Can Through Hole
JANSF2N3810L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 1mA, 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 100µA, 1mA.This product comes in a TO-78-6 device package from the supplier.Device displays Collector Emitter Breakdown (60V maximal voltage).
JANSF2N3810L Features
the DC current gain for this device is 150 @ 1mA, 5V
the vce saturation(Max) is 250mV @ 100µA, 1mA
the supplier device package of TO-78-6
JANSF2N3810L Applications
There are a lot of Microchip
JANSF2N3810L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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