JANSF2N3019
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- Mfr.Part #
- JANSF2N3019
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 49,622
- In Stock ：
- 49,622
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Power - Max :
- 800 mW
- Current - Collector (Ic) (Max) :
- 1 A
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- RoHS :
- N
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Series :
- Military, MIL-PRF-19500/391
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Transistor Type :
- NPN
- Frequency - Transition :
- -
- Brand :
- Microchip / Microsemi
- Manufacturer :
- Microchip
- Package :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Supplier Device Package :
- TO-5AA
- Current - Collector Cutoff (Max) :
- 10nA
- Product Category :
- Microchip Technology
- Datasheets
- JANSF2N3019
NPN -65°C ~ 200°C (TJ) 10nA TO-205AA, TO-5-3 Metal Can Through Hole
JANSF2N3019 Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Product comes in the supplier's device package TO-5AA.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.
JANSF2N3019 Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-5AA
JANSF2N3019 Applications
There are a lot of Microchip Technology
JANSF2N3019 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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