JANSF2N2222AL
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- Mfr.Part #
- JANSF2N2222AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 23,280
- In Stock ：
- 23,280
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Current - Collector (Ic) (Max) :
- 800mA
- Mounting Type :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Series :
- Military, MIL-PRF-19500/255
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2007
- Power - Max :
- 500mW
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Supplier Device Package :
- TO-18
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Current - Collector Cutoff (Max) :
- 50nA
- Datasheets
- JANSF2N2222AL
NPN -65°C~200°C TJ 50nA TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANSF2N2222AL Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 50V.
JANSF2N2222AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-18
JANSF2N2222AL Applications
There are a lot of Microsemi Corporation
JANSF2N2222AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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