JANSD2N5154L
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- Mfr.Part #
- JANSD2N5154L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 19,917
- In Stock ：
- 19,917
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2.5A, 5V
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Type :
- NPN
- Manufacturer :
- Microchip
- Subcategory :
- Transistors
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Brand :
- Microchip / Microsemi
- RoHS :
- N
- Series :
- Military, MIL-PRF-19500/544
- Supplier Device Package :
- TO-5AA
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector (Ic) (Max) :
- 2 A
- Product Type :
- BJTs - Bipolar Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Package :
- Bulk
- Frequency - Transition :
- -
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Power - Max :
- 1 W
- Product Status :
- Active
- Datasheets
- JANSD2N5154L
NPN -65°C ~ 200°C (TJ) 50μA TO-205AA, TO-5-3 Metal Can Through Hole
JANSD2N5154L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 2.5A, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500mA, 5A.The product comes in the supplier device package of TO-5AA.A 80 V maximal voltage - Collector Emitter Breakdown is present in the device.
JANSD2N5154L Features
the DC current gain for this device is 70 @ 2.5A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of TO-5AA
JANSD2N5154L Applications
There are a lot of Microchip Technology
JANSD2N5154L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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