JANSD2N5152U3
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- Mfr.Part #
- JANSD2N5152U3
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 46,958
- In Stock ：
- 46,958
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A, 5V
- Current - Collector (Ic) (Max) :
- 2 A
- Product Category :
- Bipolar Transistors - BJT
- Transistor Type :
- NPN
- Brand :
- Microchip / Microsemi
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Subcategory :
- Transistors
- RoHS :
- N
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Product Status :
- Active
- Supplier Device Package :
- U3 (SMD-0.5)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Mounting Type :
- Surface Mount
- Series :
- Military, MIL-PRF-19500/544
- Package / Case :
- 3-SMD, No Lead
- Power - Max :
- 1 W
- Current - Collector Cutoff (Max) :
- 50μA
- Package :
- Bulk
- Product Type :
- BJTs - Bipolar Transistors
- Datasheets
- JANSD2N5152U3
NPN -65°C ~ 200°C (TJ) 50μA 3-SMD, No Lead Surface Mount
JANSD2N5152U3 Overview
In this device, the DC current gain is 30 @ 2.5A, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 5A.Product comes in the supplier's device package U3 (SMD-0.5).There is a 80 V maximal voltage in the device due to collector-emitter breakdown.
JANSD2N5152U3 Features
the DC current gain for this device is 30 @ 2.5A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of U3 (SMD-0.5)
JANSD2N5152U3 Applications
There are a lot of Microchip Technology
JANSD2N5152U3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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