JANSD2N5152L
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- Mfr.Part #
- JANSD2N5152L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 25,318
- In Stock ：
- 25,318
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A, 5V
- Power - Max :
- 1 W
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Manufacturer :
- Microchip
- Package :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- RoHS :
- N
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Brand :
- Microchip / Microsemi
- Product Status :
- Active
- Product Type :
- BJTs - Bipolar Transistors
- Mounting Type :
- Through Hole
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- 50μA
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/544
- Supplier Device Package :
- TO-5AA
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector (Ic) (Max) :
- 2 A
- Subcategory :
- Transistors
- Datasheets
- JANSD2N5152L
NPN -65°C ~ 200°C (TJ) 50μA TO-205AA, TO-5-3 Metal Can Through Hole
JANSD2N5152L Overview
DC current gain in this device equals 30 @ 2.5A, 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500mA, 5A.Product comes in TO-5AA supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
JANSD2N5152L Features
the DC current gain for this device is 30 @ 2.5A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of TO-5AA
JANSD2N5152L Applications
There are a lot of Microchip Technology
JANSD2N5152L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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