JANSD2N5151U3
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- Mfr.Part #
- JANSD2N5151U3
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 25,207
- In Stock ：
- 25,207
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500mA, 5A
- Current - Collector (Ic) (Max) :
- 2 A
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Category :
- Bipolar Transistors - BJT
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 50μA
- RoHS :
- N
- Manufacturer :
- Microchip
- Frequency - Transition :
- -
- Supplier Device Package :
- U3
- Power - Max :
- 1.16 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 2.5A, 5V
- Mounting Type :
- Surface Mount
- Series :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Brand :
- Microchip / Microsemi
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- JANSD2N5151U3
PNP -65°C ~ 200°C (TJ) 50μA 3-SMD, No Lead Surface Mount
JANSD2N5151U3 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 2.5A, 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500mA, 5A.This product comes in a U3 device package from the supplier.Device displays Collector Emitter Breakdown (80 V maximal voltage).
JANSD2N5151U3 Features
the DC current gain for this device is 30 @ 2.5A, 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the supplier device package of U3
JANSD2N5151U3 Applications
There are a lot of Microchip Technology
JANSD2N5151U3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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