JANSD2N3637UB/TR
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- Mfr.Part #
- JANSD2N3637UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 5,707
- In Stock ：
- 5,707
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Power - Max :
- 1 W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Brand :
- Microchip / Microsemi
- Package / Case :
- 3-SMD, No Lead
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Manufacturer :
- Microchip
- Transistor Type :
- PNP
- Product Category :
- Microchip Technology
- Current - Collector (Ic) (Max) :
- 1 A
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Package :
- Tape and Reel (TR)
- Series :
- Military, MIL-PRF-19500/357
- Current - Collector Cutoff (Max) :
- 10μA
- Supplier Device Package :
- UB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Product Status :
- Active
- RoHS :
- N
- Datasheets
- JANSD2N3637UB/TR
PNP -65°C ~ 200°C (TJ) 10μA 3-SMD, No Lead Surface Mount
JANSD2N3637UB/TR Overview
In this device, the DC current gain is 100 @ 50mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 175 V.
JANSD2N3637UB/TR Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB
JANSD2N3637UB/TR Applications
There are a lot of Microchip Technology
JANSD2N3637UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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