JANSD2N3637
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- Mfr.Part #
- JANSD2N3637
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 27,533
- In Stock ：
- 27,533
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Power - Max :
- 1 W
- Mounting Type :
- Through Hole
- RoHS :
- N
- Brand :
- Microchip / Microsemi
- Series :
- Military, MIL-PRF-19500/357
- Product Category :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 10μA
- Supplier Device Package :
- TO-39 (TO-205AD)
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package :
- Bulk
- Frequency - Transition :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Current - Collector (Ic) (Max) :
- 1 A
- Datasheets
- JANSD2N3637
PNP -65°C ~ 200°C (TJ) 10μA TO-205AD, TO-39-3 Metal Can Through Hole
JANSD2N3637 Overview
In this device, the DC current gain is 100 @ 50mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 50mA.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 175 V maximal voltage in the device due to collector-emitter breakdown.
JANSD2N3637 Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-39 (TO-205AD)
JANSD2N3637 Applications
There are a lot of Microchip Technology
JANSD2N3637 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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