JANSD2N3501L
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- Mfr.Part #
- JANSD2N3501L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 44,623
- In Stock ：
- 44,623
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS :
- N
- Manufacturer :
- Microchip
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Series :
- Military, MIL-PRF-19500/366
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Frequency - Transition :
- -
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 300 mA
- Package :
- Bulk
- Power - Max :
- 1 W
- Product Category :
- Microchip Technology
- Brand :
- Microchip / Microsemi
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-5AA
- Datasheets
- JANSD2N3501L
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
JANSD2N3501L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 150 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANSD2N3501L Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-5AA
JANSD2N3501L Applications
There are a lot of Microchip Technology
JANSD2N3501L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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