JANSD2N3500L
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- Mfr.Part #
- JANSD2N3500L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 4,622
- In Stock ：
- 4,622
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- Current - Collector (Ic) (Max) :
- 300 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Series :
- Military, MIL-PRF-19500/366
- Frequency - Transition :
- -
- Transistor Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Supplier Device Package :
- TO-5AA
- Brand :
- Microchip / Microsemi
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Package :
- Bulk
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- RoHS :
- N
- Manufacturer :
- Microchip
- Product Category :
- Microchip Technology
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Power - Max :
- 1 W
- Datasheets
- JANSD2N3500L
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AA, TO-5-3 Metal Can Through Hole
JANSD2N3500L Overview
In this device, the DC current gain is 40 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 15mA, 150mA.Product comes in the supplier's device package TO-5AA.There is a 150 V maximal voltage in the device due to collector-emitter breakdown.
JANSD2N3500L Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the supplier device package of TO-5AA
JANSD2N3500L Applications
There are a lot of Microchip Technology
JANSD2N3500L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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