JANSD2N3499
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- Mfr.Part #
- JANSD2N3499
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 17,071
- In Stock ：
- 17,071
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 500 mA
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Manufacturer :
- Microchip
- Power - Max :
- 1 W
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/366
- Product Status :
- Active
- Supplier Device Package :
- TO-39 (TO-205AD)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- RoHS :
- N
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Package :
- Bulk
- Frequency - Transition :
- -
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Product Category :
- Microchip Technology
- Brand :
- Microchip / Microsemi
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Datasheets
- JANSD2N3499
NPN -65°C ~ 200°C (TJ) 10μA (ICBO) TO-205AD, TO-39-3 Metal Can Through Hole
JANSD2N3499 Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.Supplier device package TO-39 (TO-205AD) comes with the product.The device exhibits a collector-emitter breakdown at 100 V.
JANSD2N3499 Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the supplier device package of TO-39 (TO-205AD)
JANSD2N3499 Applications
There are a lot of Microchip Technology
JANSD2N3499 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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