JANSD2N3439L
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- Mfr.Part #
- JANSD2N3439L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- RH POWER BJT
- Stock
- 30,520
- In Stock ：
- 30,520
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 350 V
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Power - Max :
- 800 mW
- Product Status :
- Active
- Product Category :
- Microchip Technology
- Series :
- Military, MIL-PRF-19500/368
- Brand :
- Microchip / Microsemi
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 1 A
- Operating Temperature :
- -55°C ~ 200°C
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-5AA
- Package :
- Bulk
- RoHS :
- N
- Manufacturer :
- Microchip
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA, 10V
- Current - Collector Cutoff (Max) :
- 2µA
- Datasheets
- JANSD2N3439L
NPN -55°C ~ 200°C 2μA TO-205AA, TO-5-3 Metal Can Through Hole
JANSD2N3439L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 20mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.TO-5AA is the supplier device package for this product.This device displays a 350 V maximum voltage - Collector Emitter Breakdown.
JANSD2N3439L Features
the DC current gain for this device is 40 @ 20mA, 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the supplier device package of TO-5AA
JANSD2N3439L Applications
There are a lot of Microchip Technology
JANSD2N3439L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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