JANSD2N2907AUB
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- Mfr.Part #
- JANSD2N2907AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 24,537
- In Stock ：
- 24,537
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 600 mA
- Frequency - Transition :
- -
- Series :
- Military, MIL-PRF-19500/291
- Manufacturer :
- Microchip
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Subcategory :
- Transistors
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Package / Case :
- 3-SMD, No Lead
- Brand :
- Microchip / Microsemi
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- RoHS :
- N
- Product Category :
- Bipolar Transistors - BJT
- Power - Max :
- 500 mW
- Supplier Device Package :
- UB
- Datasheets
- JANSD2N2907AUB
PNP -65°C ~ 200°C (TJ) 50nA 3-SMD, No Lead Surface Mount
JANSD2N2907AUB Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 60 V.
JANSD2N2907AUB Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of UB
JANSD2N2907AUB Applications
There are a lot of Microchip Technology
JANSD2N2907AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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