JANSD2N2907A
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- Mfr.Part #
- JANSD2N2907A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO18
- Stock
- 35,680
- In Stock ：
- 35,680
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 500mW
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/291
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Supplier Device Package :
- TO-18
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector (Ic) (Max) :
- 600mA
- Packaging :
- Bulk
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- PNP
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50nA
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Factory Lead Time :
- 33 Weeks
- Datasheets
- JANSD2N2907A
PNP -65°C~200°C TJ 50nA TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANSD2N2907A Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1.6V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-18 contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
JANSD2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18
JANSD2N2907A Applications
There are a lot of Microsemi Corporation
JANSD2N2907A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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