JANSD2N2906AUB
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- Mfr.Part #
- JANSD2N2906AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 8,480
- In Stock ：
- 8,480
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- UB
- Power - Max :
- 500 mW
- Brand :
- Microchip / Microsemi
- Current - Collector (Ic) (Max) :
- 600 mA
- RoHS :
- N
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Package :
- Bulk
- Manufacturer :
- Microchip
- Mounting Type :
- Surface Mount
- Product Category :
- Bipolar Transistors - BJT
- Operating Temperature :
- -65°C ~ 200°C
- Series :
- Military, MIL-PRF-19500/291
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Frequency - Transition :
- -
- Package / Case :
- 3-SMD, No Lead
- Current - Collector Cutoff (Max) :
- 50nA
- Subcategory :
- Transistors
- Product Status :
- Active
- Datasheets
- JANSD2N2906AUB
PNP -65°C ~ 200°C 50nA 3-SMD, No Lead Surface Mount
JANSD2N2906AUB Overview
In this device, the DC current gain is 40 @ 150mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.6V @ 50mA, 500mA.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 60 V.
JANSD2N2906AUB Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of UB
JANSD2N2906AUB Applications
There are a lot of Microchip Technology
JANSD2N2906AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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