JANSD2N2906A
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- Mfr.Part #
- JANSD2N2906A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 21,911
- In Stock ：
- 21,911
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Type :
- BJTs - Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA, 10V
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Subcategory :
- Transistors
- RoHS :
- N
- Supplier Device Package :
- TO-18 (TO-206AA)
- Mounting Type :
- Through Hole
- Package :
- Bulk
- Current - Collector Cutoff (Max) :
- 50nA
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Power - Max :
- 500 mW
- Product Status :
- Active
- Operating Temperature :
- -65°C ~ 200°C
- Frequency - Transition :
- -
- Brand :
- Microchip / Microsemi
- Series :
- Military, MIL-PRF-19500/291
- Current - Collector (Ic) (Max) :
- 600 mA
- Product Category :
- Bipolar Transistors - BJT
- Transistor Type :
- PNP
- Datasheets
- JANSD2N2906A
PNP -65°C ~ 200°C 50nA TO-206AA, TO-18-3 Metal Can Through Hole
JANSD2N2906A Overview
This device has a DC current gain of 40 @ 150mA, 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.6V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Product package TO-18 (TO-206AA) comes from the supplier.Collector Emitter Breakdown occurs at 60 VV - Maximum voltage.
JANSD2N2906A Features
the DC current gain for this device is 40 @ 150mA, 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
JANSD2N2906A Applications
There are a lot of Microchip Technology
JANSD2N2906A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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