JANSD2N2222AUB/TR
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- Mfr.Part #
- JANSD2N2222AUB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 26,522
- In Stock ：
- 26,522
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer :
- Microchip
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- Power - Max :
- 500 mW
- Supplier Device Package :
- UB
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Operating Temperature :
- -65°C ~ 200°C
- Current - Collector (Ic) (Max) :
- 800 mA
- Brand :
- Microchip / Microsemi
- Subcategory :
- Transistors
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector Cutoff (Max) :
- 50nA
- Package :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Series :
- Military, MIL-PRF-19500/255
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-SMD, No Lead
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Frequency - Transition :
- -
- RoHS :
- N
- Datasheets
- JANSD2N2222AUB/TR
NPN -65°C ~ 200°C 50nA 3-SMD, No Lead Bulk Surface Mount
JANSD2N2222AUB/TR Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Product comes in the supplier's device package UB.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
JANSD2N2222AUB/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
JANSD2N2222AUB/TR Applications
There are a lot of Microchip Technology
JANSD2N2222AUB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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