JANSD2N2222AUB
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- Mfr.Part #
- JANSD2N2222AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- RH SMALL-SIGNAL BJT
- Stock
- 47,274
- In Stock ：
- 47,274
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- RoHS :
- N
- Current - Collector (Ic) (Max) :
- 800 mA
- Product Status :
- Active
- Frequency - Transition :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Power - Max :
- 500 mW
- Brand :
- Microchip / Microsemi
- Supplier Device Package :
- UB
- Package :
- Bulk
- Product Category :
- Bipolar Transistors - BJT
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Series :
- Military, MIL-PRF-19500/255
- Manufacturer :
- Microchip
- Current - Collector Cutoff (Max) :
- 50nA
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Package / Case :
- 3-SMD, No Lead
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Datasheets
- JANSD2N2222AUB
NPN -65°C ~ 200°C (TJ) 50nA 3-SMD, No Lead Surface Mount
JANSD2N2222AUB Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 50 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
JANSD2N2222AUB Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
JANSD2N2222AUB Applications
There are a lot of Microchip Technology
JANSD2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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