JANS2N7371
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- Mfr.Part #
- JANS2N7371
- Manufacturer
- Microchip Technology
- Package / Case
- TO-254-3, TO-254AA
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 48,118
- In Stock ：
- 48,118
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip / Microsemi
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Package :
- Bulk
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 6A, 3V
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 12 A
- Series :
- Military, MIL-PRF-19500/623
- Package / Case :
- TO-254-3, TO-254AA
- Product Category :
- Microchip Technology
- Supplier Device Package :
- TO-254AA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Manufacturer :
- Microchip
- Current - Collector Cutoff (Max) :
- 1mA
- RoHS :
- N
- Power - Max :
- 100 W
- Datasheets
- JANS2N7371
PNP - Darlington -65°C ~ 200°C (TJ) 1mA TO-254-3, TO-254AA Through Hole
JANS2N7371 Overview
This device has a DC current gain of 1000 @ 6A, 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-254AA.Detection of Collector Emitter Breakdown at 100 V maximal voltage is present.
JANS2N7371 Features
the DC current gain for this device is 1000 @ 6A, 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the supplier device package of TO-254AA
JANS2N7371 Applications
There are a lot of Microchip Technology
JANS2N7371 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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