JANS2N6250T1

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Mfr.Part #
JANS2N6250T1
Manufacturer
Microsemi
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Datasheet
Download
Description
TRANS NPN 275V 10A TO254AA
Stock
19,409
In Stock :
19,409

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Manufacturer :
Microsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation-Max (Abs) :
175W
Packaging :
Bulk
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Published :
2007
Number of Terminations :
3
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 10A 3V
Transistor Element Material :
SILICON
Terminal Form :
PIN/PEG
Current - Collector (Ic) (Max) :
10A
Configuration :
Single
Transistor Type :
NPN
Mounting Type :
Through Hole
Operating Temperature :
-65°C~200°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
1mA
HTS Code :
8541.29.00.95
RoHS Status :
Non-RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Package / Case :
TO-254-3, TO-254AA (Straight Leads)
Terminal Position :
Single
Pbfree Code :
No
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1.25A, 10A
Surface Mount :
No
Voltage - Collector Emitter Breakdown (Max) :
275V
Reference Standard :
MIL-19500/510
JESD-30 Code :
S-XSFM-P3
Qualification Status :
Qualified
Series :
Military, MIL-PRF-19500/510
Power - Max :
6W
Datasheets
JANS2N6250T1
Introducing Transistors - Bipolar (BJT) - Single Microsemi JANS2N6250T1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-254-3, TO-254AA (Straight Leads), JANS2N6250T1 pinout, JANS2N6250T1 datasheet PDF, JANS2N6250T1 amp .Beyond Transistors - Bipolar (BJT) - Single Microsemi JANS2N6250T1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-254-3, TO-254AA (Straight Leads) Bulk Through Hole

JANS2N6250T1 Overview


This device has a DC current gain of 8 @ 10A 3V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 275V maximal voltage is present.

JANS2N6250T1 Features


the DC current gain for this device is 8 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1.25A, 10A


JANS2N6250T1 Applications


There are a lot of Microsemi Corporation
JANS2N6250T1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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